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AS1333
1 General Description
The AS1333 is a step-down DC-DC converter designed to power portable applications from a single Li-Ion battery. The device also achieves high-performance in mobile phones and other applications requiring low dropout voltage. The AS1333 steps down an input voltage of 3.25V to 5.5V to a fixed output voltage of 3.09V. Fixed-frequency PWM operation minimizes RF interference. Shutdown function turns the device off and reduces battery consumption to 0.01A (typ.). The AS1333 is available in a 8-pin WL-CSP package. A high switching frequency (2 MHz) allows use of tiny surface-mount components. Only three small external surface-mount components, an inductor and two ceramic capacitors are required.
D a ta S he e t
6 5 0 m A , St e p D o w n D C / D C C o n v e r t e r f o r P o r ta b l e A p p l i c a t i o n s
2 Key Features
! ! ! ! !
PWM Switching Frequency: 2MHz Single Lithium-Ion Cell Operation Fixed Output Voltage (3.09V) Maximum load capability of 650mA High Efficiency (96% Typ at 3.6VIN, 3.09VOUT at 400mA) from internal synchronous rectification Current Overload Protection Thermal Overload Protection Soft Start Low Dropout Voltage (140 m Typ PFET) 8-pin WL-CSP
! ! ! ! !
3 Applications
The AS1333 is an ideal solution for cellular phones, hand-held radios, RF PC cards, battery powered RF devices, and RFIC chipsets.
Figure 1. Typical Application Circuit
VIN 10 F PVIN VDD
3.3 H EN SW
VOUT 3.09V
AS1333
FB 10 F
PGND NC
AGND
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AS1333
Data Sheet - P i n A s s i g n m e n t s
4 Pin Assignments
Figure 2. Pin Configuration
Top View SW PVIN A1 A2 A3 PGND PGND A3
Bottom View SW A2 A1 PVIN
VDD
B1
B3
AGND
AGND
B3
B1
VDD
EN
C1
C2 NC
C3
FB
FB
C3
C2 NC
C1
EN
Pin Descriptions
Table 1. Pin Descriptions Pin Name PVIN Pin Number A1 Note: for guaranteed VOUT = 3.09V set VIN = 3.25V to 5.5V; +2.7V to +5.5V Power Supply Voltage. Analog Supply Input. VDD EN NC FB AGND PGND SW B1 C1 C2 C3 B3 A3 A2 Note: for guaranteed VOUT = 3.09V set VIN = 3.25V to 5.5V; Enable Input. Set this digital input high for normal operation. For shutdown, set low. May be connected to VDD, SGND or floating. Feedback Pin. Connect to the output at the output filter capacitor. Analog and Control Ground. Power Ground. Switch Pin. Switch node connection to the internal PFET switch and NFET synchronous rectifier. Connect to an inductor with a saturation current rating that exceeds the maximum switch peak current limit specification of the AS1333. Description +2.7V to +5.5V Power Supply Voltage. Input to the internal PFET switch.
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AS1333
Data Sheet - A b s o l u t e M a x i m u m R a t i n g s
5 Absolute Maximum Ratings
Stresses beyond those listed in may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in Electrical Characteristics on page 4 is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 2. Absolute Maximum Ratings Parameter VDD, PVIN to AGND PGND to AGND EN, FB, NC SW PVIN to VDD Operating Temperature Range Junction Temperature (TJ-MAX) Storage Temperature Range Maximum Lead Temperature (Soldering, 10 sec) ESD Rating Human Body Model Operating Ratings Input Voltage Range Recommended Load Current Junction Temperature (TJ) Range -40 2.7 5.5 650 +125 V mA C In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP = 125C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the part/package in the application (JA), as given by the following equation: TA-MAX = TJ-MAX-OP - (JA x PD-MAX). 2 kV HBM MIL-Std. 883E 3015.7 methods -65 Min -0.3 -0.3 Max +7.0 +0.3 Units V V V V V C C C C 7.0V max Notes
AGND - 0.3 VDD + 0.3 PGND - 0.3 PVIN + 0.3 -0.3 -40 +0.3 +85 +150 +150 +260
Ambient Temperature (TA) Range
-40
+85
C
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AS1333
Data Sheet - E l e c t r i c a l C h a r a c t e r i s t i c s
6 Electrical Characteristics
TA = TJ = -40C to +85C; PVIN = VDD = EN = 3.6V, unless otherwise noted. Typ. values are at TA=25C. Table 3. Electrical Characteristics Symbol VFB ISHDN IQ RDSON(P) Parameter Feedback Voltage Shutdown supply current DC bias current into VDD Pin-Pin Resistance for PFET Conditions PVIN = 3.6V EN = SW = 0V
1 2
Min 3.028
Typ 3.09 0.01 1 140
Max 3.15 2 1.4 200 230
Units V A mA m
FB = 0V, No Switching ISW = 200mA; TA = +25C ISW = 200mA
RDSON(N) ILIM,PFET FOSC VIH,EN VIL,EN IPIN,ENABLE
Pin-Pin Resistance for NFET Switch peak current limit Internal oscillator frequency Logic high input threshold Logic low input threshold Pin pull down current
ISW = -200mA; TA = +25C ISW = -200mA Current limit is built-in, fixed, and not adjustable. 935 1.8 1.2
300
415 485
m mA MHz V
1100 2
1200 2.2
0.5 5 10
V A
1. Shutdown current includes leakage current of PFET. 2. IQ specified here is when the part is operating at 100% duty cycle.
System Characteristics
TA = 25C; PVIN = VDD = EN = 3.6V, unless otherwise noted. The following parameters are verified by characterisation and are not production tested. Table 4. System Characteristics Symbol T_ON
Parameter Turn on time (time for output to reach 3.09V from Enable low to high transition) Efficiency (L = 3.3H, DCR 100m) Ripple voltage, PWM mode
1
Conditions EN = Low to High, VIN = 4.2V, VOUT = 3.09V, COUT = 10F, IOUT 1mA VIN = 3.6V, VOUT = 3.09V, IOUT = 400mA VIN = 4.2V, VOUT = 3.09V, IOUT = 10mA to 400mA VIN = 600mV perturbance, over Vin range 3.4V to 5.5V TRISE = TFALL = 10s, VOUT = 3.09V, IOUT = 100mA VIN = 4.2V, VOUT = 3.09V, transients up to 100mA, TRISE = TFALL = 10s
Min
Typ 210
Max 350
Units s
96 5
% mVp-p
VOUT_ripple
Line_tr
Line transient response
50
mVpk
Load_tr
Load transient response
50
mVpk
1. Ripple voltage should measured at COUT electrode on good layout PC board and under condition using suggested inductors and capacitors.
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AS1333
Data Sheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s
7 Typical Operating Characteristics
Circuit in Figure 23 on page 10, PVIN = VDD = EN = 3.6V, L = 3.3H (LPS4018-332ML_), CIN = COUT = 10F (GRM21BR61C106KA01) unless otherwise noted; Figure 3. Quiescent Current vs. VIN
0.55
Figure 4. Shutdown Current vs. Temperature
0.3
Vi n=3.25V Vi n=3.6V
Quiescent Current (mA)
Shutdown Current (A)
0.25 0.2 0.15 0.1 0.05 0 -40
Vi n=4.2V Vi n=5.5V
0.5
0.45
0.4
- 45C + 25C + 85C
0.35 2.5 3 3.5 4 4.5 5 5.5
-15
10
35
60
85
Supply Voltage (V) Figure 5. Switching Frequency Variation vs. Temp. Switching Frequency Variation (%)
4 3
Temperature (C) Figure 6. Output Voltage vs. Supply Voltage
3.15 3.13
Output Voltage (V)
Vi n=3.6V
2 1 0 -1 -2 -3 -4 -40
Vi n=4.2V Vi n=5.5V
3.11 3.09 3.07 3.05 3.03 3.25
Iout=50mA Iout=300mA Iout=650mA
-15
10
35
60
85
3.75
4.25
4.75
5.25
Temperature (C)
Supply Voltage (V)
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AS1333
Data Sheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s
Figure 7. Output Voltage vs. Temperature
3.15 3.13
Figure 8. Efficiency vs. Output Current
100 95
Output Voltage (V)
3.11 3.09 3.07 3.05 3.03 -40
Iout=50mA Iout=300mA Iout=650mA
Efficiency (%)
90 85 80 75 70
Vi n=3.25V Vi n=3.6V Vi n=3.9V Vi n=4.2V Vi n=4.5V Vi n=5.5V
-15
10
35
60
85
0
100
200
300
400
500
600
700
Temperature (C)
Output Current (mA)
Figure 9. Switch Peak Current Limit vs. Temperature; closed loop
1.2
Figure 10. Load Transient Response; VOUT = 3.09V, VIN = 4.2V
Peak Current Limit (A)
1.15
1.1
IL
Vi n=3.6V Vi n=5.5V
1 -40
-15
10
35
60
85
IOUT
Vi n=2.7V
10s/Div
Temperature (C) Figure 11. Startup; VIN = 3.6V, VOUT = 3.09V, IOUT<1mA, RLOAD=3.3k Figure 12. Startup; VIN = 4.2V, VOUT = 3.09V, IOUT<1mA, RLOAD=3.3k
5V/Div
2V/Div 500mA/DIV 2V/Div
VOUT
VOUT
50s/Div
50s/Div
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1V/Div
EN
EN
500mA/DIV
IL
IL
2V/Div 5V/Div
VSW
VSW
100mA 400mA
1.05
200mA/Div
200mV/Div
VOUT
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AS1333
Data Sheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s
Figure 13. Shutdown Response; VIN=3.6V, VOUT=3.09V, RLOAD=5
Figure 14. Shutdown Response; VIN=4.2V, VOUT=3.09V, RLOAD=5
5V/Div
VSW
2V/Div
VOUT
VOUT
2V/Div 500mA/Div
50s/Div
50s/Div
Figure 15. Line Transient Response; VIN=3.3V to 3.9V, IOUT=100mA, VOUT=3.09V
Figure 16. Timed Current Limit Response; VIN = 3.6V
1V/Div
VIN
100mA/Div
IL
50mV/Div
VOUT
50s/Div
10s/Div
Figure 17. Output Voltage Ripple; VOUT = 3.09V, IOUT = 200mA
Figure 18. VOUT Ripple in Skip Mode; VIN=3.31V, VOUT=3.09V, RLOAD=5
VSW
2V/Div
VSW
100mA/Div
5mV/Div
200ns/Div
1s/Div
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10mV/Div
VOUT
VOUT
200mA/Div
IL
IL
2V/Div
2A/Div
VOUT
IL
2V/Div
2V/Div
VSW
2V/Div
EN
EN
500mA/Div
IL
IL
2V/Div
5V/Div
VSW
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AS1333
Data Sheet - Ty p i c a l O p e r a t i n g C h a r a c t e r i s t i c s
Figure 19. RDSON (P-Chanel) vs. Temp.; ISW=200mA
350 300 250
Figure 20. RDSON (N-Chanel) vs. Temp.; ISW=-200mA
350 300 250
R DSON (m )
200 150 100 50 0 -40
Vi n=2.7V Vi n=3.6V Vi n=5.5V
R DSON (m )
200 150 100 50 0 -40
Vi n=2.7V Vi n=3.6V Vi n=5.5V
-15
10
35
60
85
-15
10
35
60
85
Temperature (C)
Temperature (C)
Figure 21. EN High Threshold vs. VIN
1.2 1.15
EN High Threshold (V)
1.1 1.05 1 0.95 0.9 0.85 0.8 2.5 3 3.5 4 4.5 5 5.5
- 45C + 25C + 90C
Supply Voltage (V)
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AS1333
Data Sheet - D e t a i l e d D e s c r i p t i o n
8 Detailed Description
The AS1333 is a simple, step-down DC-DC converter optimized for powering portable applications that require low dropout voltages such as mobile phones, portable communicators, and similar battery powered RFIC devices. Besides being packed with numerous features like current overload protection, thermal overload shutdown and soft start, AS1333 displays the following characteristics:
! !
Its operation is based on current-mode buck architecture with synchronous rectification for high efficiency. Allows the application to operate at maximum efficiency over a wide range of power levels from a single Li-Ion battery cell. Provides for a maximum load capability of 650mA in PWM mode, wherein the maximum load range may vary depending on input voltage, output voltage and the selected inductor. Is ranked at an efficiency of around 96% for a 400mA load with a 3.6V input and a fixed output voltage of 3.09V.
!
!
Figure 22. Functional Block Diagram
VDD
PVIN
Oscillator
Current Sense PWM COMP Error Amplifier
FB
NC
Soft Start
Mosfet Control Logic
SW
Main Control Shutdown Control
EN
AS1333
AGND
PGND
AS1333 is fabricated using a chip-scale 8-pin WL-CSP package, which requires special design considerations for implementation. Its fine bumppitch requires careful board design and precision assembly equipment. This package offers the smallest possible size, for space-critical applications such as cell phones, where board area is an important design consideration. The size of the external components is reduced by using a high switching frequency (2MHz). Figure 1 on page 1 demonstrates that only three external power components are required for implementation. The WLCSP package is appropriate for opaque case applications, where its edges are not subject to highintensity ambient red or infrared light. Also, the system controller should set EN low during power-up and other low supply voltage conditions. See Shutdown Mode on page 11.
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AS1333
Data Sheet - D e t a i l e d D e s c r i p t i o n
Figure 23. Typical Operating System Circuit
VIN 3.25V to 5.5V C1 10 F NC PVIN VDD L1 3.3 H SW
VOUT 3.09V
AS1333
System Controller ON/OFF FB C2 EN 10 F
SGND
PGND
Operating the AS1333
AS1333's control block turns on the internal PFET (P-channel MOSFET) switch during the first part of each switching cycle, thus allowing current to flow from the input through the inductor to the output filter capacitor and load. The inductor limits the current to a ramp with a slope of around (VIN - VOUT) / L, by storing energy in a magnetic field. During the second part of each cycle, the controller turns the PFET switch off, blocking current flow from the input, and then turns the NFET (N-channel MOSFET) synchronous rectifier on. As a result, the inductor's magnetic field collapses, generating a voltage that forces current from ground through the synchronous rectifier to the output filter capacitor and load. While the stored energy is transferred back into the circuit and depleted, the inductor current ramps down with a slope around VOUT / L. The output filter capacitor stores charge when the inductor current is high, and releases it when low, smoothing the voltage across the load. The output voltage is regulated by modulating the PFET switch on time to control the average current sent to the load. The effect is identical to sending a duty-cycle modulated rectangular wave formed by the switch and synchronous rectifier at SW to a low-pass filter formed by the inductor and output filter capacitor. The output voltage is equal to the average voltage at the SW pin. While in operation, the output voltage is regulated by switching at a constant frequency and then modulating the energy per cycle to control power to the load. Energy per cycle is set by modulating the PFET switch on-time pulse width to control the peak inductor current. This is done by comparing the signal from the current-sense amplifier with a slope compensated error signal from the voltage-feedback error amplifier. At the beginning of each cycle, the clock turns on the PFET switch, causing the inductor current to ramp up. When the current sense signal ramps past the error amplifier signal, the PWM comparator turns off the PFET switch and turns on the NFET synchronous rectifier, ending the first part of the cycle. If an increase in load pulls the output down, the error amplifier output increases, which allows the inductor current to ramp higher before the comparator turns off the PFET. This increases the average current sent to the output and adjusts for the increase in the load. Before appearing at the PWM comparator, a slope compensation ramp from the oscillator is subtracted from the error signal for stability of the current feedback loop. The minimum on time of PFET in PWM mode is 50ns (typ.)
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AS1333
Data Sheet
Internal Synchronous Rectifier
To reduce the rectifier forward voltage drop and the associated power loss, the AS1333 uses an internal NFET as a synchronous rectifier. The big advantage of a synchronous rectification is the higher efficiency in a condition where the output voltage is low compared to the voltage drop across an ordinary rectifier diode. During the inductor current down slope in the second part of each cycle the synchronous rectifier is turned on. Before the next cycle the synchronous rectifier is turned off. There is no need for an external diode because the NFET is conducting through its intrinsic body diode during the transient intervals before it turns on.
Shutdown Mode
If EN is set to high (>1.2V) the AS1333 is in normal operation mode. During power-up and when the power supply is less than 2.7V minimum operating voltage, the chip should be turned off by setting EN low. In shutdown mode the following blocks of the AS1333 are turned off, PFET switch, NFET synchronous rectifier, reference voltage source, control and bias circuitry. The AS1333 is designed for compact portable applications, such as mobile phones where the system controller controls operation mode for maximizing battery life and requirements for small package size outweigh the additional size required for inclusion of UVLO (Under Voltage Lock-Out) circuitry. Note: Setting the EN digital pin low (<0.5V) places the AS1333 in a 0.01A (typ.) shutdown mode.
Thermal Overload Protection
To prevent the AS1333 from short-term misuse and overload conditions the chip includes a thermal overload protection. To block the normal operation mode the device is turning the PFET and the NFET off in PWM mode as soon as the junction temperature exceeds 150C. To resume the normal operation the temperature has to drop below 125C. Note: Continuing operation in thermal overload conditions may damage the device and is considered bad practice.
Current Limiting For Protection
If in the PWM mode the cycle-by-cycle current limit of 1200mA (max.) is reached the current limit feature takes place and protect the device and the external components. A timed current limiting mode is working when a load pulls the output voltage down to approximately 0.375V. In this timed current limit mode the inductor current is forced to ramp down to a safe value. This is achived by turning off the internal PFET switch and delaying the start of the next cycle for 3.5us. The synchronous rectifier is also turned off in the timed current limit mode. The advantage of the timed current limit mode is to prevent the device from the loss of the current control.
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AS1333
Data Sheet
9 Application Information
Inductor Selection
For the external inductor, a 3.3H inductor is recommended. Minimum inductor size is dependant on the desired efficiency and output current. Inductors with low core losses and small DCR at 2MHz are recommended. Table 5. Recommended Inductor Part Number LPS4018-222ML_ LPS4018-332ML_ LPS4018-472ML_ L 2.2H 3.3H 4.7H DCR 0.070 0.080 0.125 Current Rating Dimensions (L/W/T) 2.9A 2.4A 1.9A 3.9x3.9x1.7mm 3.9x3.9x1.7mm 3.9x3.9x1.7mm Manufacturer Coilcraft www.coilcraft.com
Capacitor Selection
A 10F capacitor is recommended for CIN as well as a 10F for COUT. Small-sized X5R or X7R ceramic capacitors are recommended as they retain capacitance over wide ranges of voltages and temperatures.
Input and Output Capacitor Selection
Low ESR input capacitors reduce input switching noise and reduce the peak current drawn from the battery. Also low ESR capacitors should be used to minimize VOUT ripple. Multi-layer ceramic capacitors are recommended since they have extremely low ESR and are available in small footprints. For input decoupling the ceramic capacitor should be located as close to the device as practical. A 4.7F input capacitor is sufficient for most applications. Larger values may be used without limitations. A 2.2F to 10F output ceramic capacitor is sufficient for most applications. Larger values up to 22F may be used to obtain extremely low output voltage ripple and improve transient response. Table 6. Recommended Input and Output Capacitor Part Number GRM188R60J475KE19 GRM219R60J475KE19 GRM21BR61C475KA88 GRM31CR71E475KA88 GRM188R60J106ME47 GRM21BR60J106KE19 GRM21BR61A106KE19 GRM32DR71C106KA01 GRM21BR60J226ME39 GRM32ER71A226KE20 C 4.7F 4.7F 4.7F 4.7F 10F 10F 10F 10F 22F 22F TC Code Rated Voltage X5R X5R X5R X7R X5R X5R X5R X7R X5R X7R 6.3V 6.3V 16V 25V 6.3V 6.3V 10V 16V 6.3V 10V Dimensions (L/W/T) 0603 0805 0805 1206 0603 0805 0805 1210 0805 1210 Manufacturer Murata www.murata.com
EN Pin Control
Drive the EN pin using the system controller to turn the AS1333 ON and OFF. Use a comparator, Schmidt trigger or logic gate to drive the EN pin. Set EN high (>1.2V) for normal operation and low (<0.5V) for a 0.01A (typ.) shutdown mode. Set EN low to turn off the AS1333 during power-up and under voltage conditions when the power supply is less than the 2.7V minimum operating voltage. The part is out of regulation when the input voltage is less than 2.7V.
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AS1333
Data Sheet - A p p l i c a t i o n I n f o r m a t i o n
Layout Considerations
The AS1333 converts higher input voltage to lower output voltage with high efficiency. This is achieved with an inductorbased switching topology. During the first half of the switching cycle, the internal PMOS switch turns on, the input voltage is applied to the inductor, and the current flows from PVDD line to the output capacitor (C2) through the inductor. During the second half cycle, the PMOS turns off and the internal NMOS turns on. The inductor current continues to flow via the inductor from the device PGND line to the output capacitor (C2). Referring to Figure 24, the AS1333 has two major current loops where pulse and ripple current flow. The loop shown in the left hand side is most important, because pulse current shown in Figure 24 flows in this path. The right hand side is next. The current waveform in this path is triangular, as shown in Figure 24. Pulse current has many high-frequency components due to fast di/dt. Triangular ripple current also has wide high-frequency components. Board layout and circuit pattern design of these two loops are the key factors for reducing noise radiation and stable operation. Other lines, such as from battery to C1(+) and C2(+) to load, are almost DC current, so it is not necessary to take so much care. Only pattern width (current capability) and DCR drop considerations are needed. Figure 24. Current Loop
VIN 3.25V to 5.5V + C1
i
fOSC = 2MHz VDD i L1 3.3 H EN SW VOUT 3.09V
PVIN
- 10 F
FB
C2 10 F
+ -
PGND NC
AGND
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AS1333
Data Sheet - P a c k a g e D r a w i n g s a n d M a r k i n g s
10 Package Drawings and Markings
The device is available in a 8-pin WL-CSP Figure 25. Package Drawings
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AS1333
Data Sheet - O r d e r i n g I n f o r m a t i o n
11 Ordering Information
The device is available as the standard products listed below.
Table 7. Ordering Information Part Number AS1333-BWLT Marking ASQX Description 650mA, DC-DC Step-Down for RF Delivery Form Tape and Reel Package 8-pin WL-CSP
All devices are RoHS compliant and free of halogene substances.
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AS1333
Data Sheet
Copyrights
Copyright (c) 1997-2009, austriamicrosystems AG, Schloss Premstaetten, 8141 Unterpremstaetten, Austria-Europe. Trademarks Registered (R). All rights reserved. The material herein may not be reproduced, adapted, merged, translated, stored, or used without the prior written consent of the copyright owner. All products and companies mentioned are trademarks or registered trademarks of their respective companies.
Disclaimer
Devices sold by austriamicrosystems AG are covered by the warranty and patent indemnification provisions appearing in its Term of Sale. austriamicrosystems AG makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. austriamicrosystems AG reserves the right to change specifications and prices at any time and without notice. Therefore, prior to designing this product into a system, it is necessary to check with austriamicrosystems AG for current information. This product is intended for use in normal commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical life-support or life-sustaining equipment are specifically not recommended without additional processing by austriamicrosystems AG for each application. For shipments of less than 100 parts the manufacturing flow might show deviations from the standard production flow, such as test flow or test location. The information furnished here by austriamicrosystems AG is believed to be correct and accurate. However, austriamicrosystems AG shall not be liable to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interruption of business or indirect, special, incidental or consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical data herein. No obligation or liability to recipient or any third party shall arise or flow out of austriamicrosystems AG rendering of technical or other services.
Contact Information
Headquarters austriamicrosystems AG A-8141 Schloss Premstaetten, Austria Tel: +43 (0) 3136 500 0 Fax: +43 (0) 3136 525 01
For Sales Offices, Distributors and Representatives, please visit: http://www.austriamicrosystems.com/contact-us
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